Monolithic broadband transimpedance amplifiers and their high frequency small and large signal characteristics using CBE-based GaInP/GaAs HBT technology

Monolithic broadband transimpedance amplifiers were developed using chemica l beam epitaxy (CBE) based GaInP/ GaAs HBT technology. The developed HBTs s howed a cut-off frequency (f(T)) of 60 GHz and a maximum oscillation freque ncy (f(max)) of 100 GHz using laterally etched undercut (LEU) technology. T he fabricated amplifiers had a maximum bandwidth of 19 GHz and an associate d transimpedance gain of 47 dB Omega. The small and large signal characteri stics of two transimpedance amplifier designs with similar gain were invest igated. The cascode design when compared to the common-emitter design, prov ided a higher bandwidth and a more open eye diagram, as well as less sensit ive to input power gain and eye diagram pattern. (C) 2000 Published by Else vier Science Ltd. All rights reserved.