Investigation of the optical spot position on the performance of metal-semiconductor-metal structures: novel application

Citation
Ame. Safwat et al., Investigation of the optical spot position on the performance of metal-semiconductor-metal structures: novel application, SOL ST ELEC, 44(11), 2000, pp. 2077-2080
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
44
Issue
11
Year of publication
2000
Pages
2077 - 2080
Database
ISI
SICI code
0038-1101(200011)44:11<2077:IOTOSP>2.0.ZU;2-A
Abstract
The effect of the optical spot position relative to the electrodes in metal -semiconductor-metal (MSM) structures has been studied. Theoretically, we h ave found that the I-V characteristic depends strongly on the position and the intensity of the optical spot. Besides being very sensitive to the opti cal spot position, at zero applied bias, the MSM can be used as a current s ource where the magnitude and the direction of the output current depend on the position and the intensity of the optical spot. Being a planar structu re with high signal-to-noise ratio makes the MSM a unique structure for the se types of applications. (C) 2000 Published by Elsevier Science Ltd. All r ights reserved.