A novel hybrid plasma apparatus optimized for diamond-like carbon (DLC) fil
m deposition is presented. A plasma was generated by use of a jet matrix pl
asma source (JeMPS) operated at 13.56 MHz and up to 1 kW. The 48 plasma jet
s were arranged as a hexagonal matrix within a 15-cm diameter circle. In th
e center of an argon plasma at pressure of I mbar the ion concentration is
4.82 X 10(11) cm(-3). At a distance of 6 cm from the plasma source a water-
cooled substrate holder biased with 13.56 MHz power was positioned. A plasm
a-enhanced chemical vapor deposition (PECVD) process was used. Helium was u
sed as a carrier gas excited in the jet matrix plasma;source. Methane, used
as a source of carbon, was introduced in the zone between the plasma sourc
e and the substrate holder. A fractal carrier and process gas distribution
system allowed high film homogeneity. Typical gas flows were 500 and 100 se
em, respectively; typical process pressure was 1 mbar. A Root's blower with
a pumping speed of 250 m(3) h(-1) was used. A deposition rate of 78 nm min
(-1) at room temperature was achieved. The him thickness variation over a 5
inch wafer was less than 7%. As the de bias of the substrate holder increa
sed from 350 to 400 V the sp(2)/sp(3) ratio increased from 0.79 to 0.88. Th
e refractive index of almost 2.4 and a Vickers hardness of 3000 were eviden
ce of high quality DLC films. (C) 2000 Elsevier Science B.V. All rights res
erved.