Structural characteristics of boron nitride thin films synthesized by the technique of unequal-potential hollow-cathode effect

Boron nitride thin films were synthesized on Si(100) substrates in (5% B2H6 + He)/N-2/H-2 gas mixtures by the technique of unequal-potential hollow-ca thode effect (UPHCE). Because of the electric current magnification functio n of UPHCE, the reactive gas mixture (N-2, B2H6, etc.) was activated and io nized effectively. The structure characteristics of the films were investig ated by X-ray diffraction (XRD) and infrared reflection absorption spectros copy (IRAS). Results show that the phases of BN thin films, which contain c BN phase and hBN phase, are changed with the difference of the flow ratio o f reactive gases. (C) 2000 Elsevier Science B.V. All rights reserved.