Lh. Tian et al., Structural characteristics of boron nitride thin films synthesized by the technique of unequal-potential hollow-cathode effect, SURF COAT, 131(1-3), 2000, pp. 70-72
Boron nitride thin films were synthesized on Si(100) substrates in (5% B2H6
+ He)/N-2/H-2 gas mixtures by the technique of unequal-potential hollow-ca
thode effect (UPHCE). Because of the electric current magnification functio
n of UPHCE, the reactive gas mixture (N-2, B2H6, etc.) was activated and io
nized effectively. The structure characteristics of the films were investig
ated by X-ray diffraction (XRD) and infrared reflection absorption spectros
copy (IRAS). Results show that the phases of BN thin films, which contain c
BN phase and hBN phase, are changed with the difference of the flow ratio o
f reactive gases. (C) 2000 Elsevier Science B.V. All rights reserved.