Synthesis of aluminum nitride films by activated reactive ion plating witha cathodic arc source

A new type of method, which synthesized aluminum nitride (AlN) films by act ivated reactive ion plating with a cathodic are source, was introduced. Usi ng aluminum and nitrogen gas as source materials, the aluminum nitride film s were deposited on Si(100), Mo and stainless steel substrates, and the dep osition rate was varied from 4.7 to 20.2 nm/s. The structure and morphology of the synthesized films were evaluated using X-ray diffraction (XRD), sca nning electron microscopy (SEM) and infrared reflection absorption spectros copy (IRAS). The morphology of the films was cauliflower. A transition zone was detected between the film and the substrate. (C) 2000 Elsevier Science B.V. All rights reserved.