Hw. Xin et al., Synthesis of aluminum nitride films by activated reactive ion plating witha cathodic arc source, SURF COAT, 131(1-3), 2000, pp. 167-170
A new type of method, which synthesized aluminum nitride (AlN) films by act
ivated reactive ion plating with a cathodic are source, was introduced. Usi
ng aluminum and nitrogen gas as source materials, the aluminum nitride film
s were deposited on Si(100), Mo and stainless steel substrates, and the dep
osition rate was varied from 4.7 to 20.2 nm/s. The structure and morphology
of the synthesized films were evaluated using X-ray diffraction (XRD), sca
nning electron microscopy (SEM) and infrared reflection absorption spectros
copy (IRAS). The morphology of the films was cauliflower. A transition zone
was detected between the film and the substrate. (C) 2000 Elsevier Science
B.V. All rights reserved.