High current metal-ion implantation to fabricate metal silicides

Using a metal vapor vacuum are (MEVVA) ion source, metallic silicides, such as C54-TiSi2, NiSi2, COSi2, NbSi2 and TaSi2, etc., with good electrical pr operties were obtained directly on Si wafers by high current metal-ion impl antation with neither in situ heating nor post-annealing. Semiconducting si licides, such as beta -FeSi2 and CrSi2, were also directly formed on Si waf ers by MEVVA ion implantation with unique physical properties. The growth m echanism of the metal silicides is also discussed for Ni-Si as a representa tive system. (C) 2000 Elsevier Science B.V. All rights reserved.