Plasma-based low-energy ion implantation for low-temperature surface engineering

This paper summarizes the plasma-based low-energy ion implantation techniqu e, including plasma source ion nitriding/carburizing and plasma source low- energy ion enhanced deposition of thin films, developed from a combination of two techniques based on conventional plasma-based ion implantation and l ow-energy ion beam implantation for improvement in wear resistance and corr osion resistance for metals and alloys. An electron cyclotron resonance (EC R) microwave plasma source is used to produce the plasma with the high plas ma density, electron temperature and ionization degree. The ions are accele rated from the plasma by a low pulsed negative bias of - 0.4- - 3 kV, which is similar to the cathode potential of conventional plasma thermo-chemical diffusion processing. The low process temperature is in the range from 150 degreesC to 500 degreesC, which corresponds to the upper limit of conventi onal ion beam implantation and to the lower limit of plasma thermo-chemical diffusion processing, respectively. Low-energy ion implantation and simult aneous indiffusion is the main mass transfer mechanism, and direct thermo-c hemical diffusion absorption is an additional mass transfer mechanism for f ormation of the nitrided/carburized layer and thin film. It has been proved that plasma-based low-energy ion implantation technique has the potential for applications in industry for surface modification of metals and alloys. (C) 2000 Elsevier Science B.V. All rights reserved.