Preparation of multi-layer carbon nitride films by alternate processes of magnetron sputtering and ion beam implantation

Multi-layer carbon nitride films have been deposited onto Si (100) substrat es by an alternate process of DC magnetron sputtering and nitrogen ion beam (N+/N-2(+)) implantation at ion energies from 0.5 to 10 keV. Depth profile studies by X-ray photoelectron spectroscopy (XPS) showed that it is possib le to control the layer structure by regulating sputtering time and ion bea m energy in the alternate process. Two different films were fabricated and compared. The first one is a multi-layer film of carbon and carbon nitride and the other is a homogeneous layer him of carbon nitride. Fourier transfo rm infrared (FT-IR) spectroscopy studies showed a broad absorption band of approximately 1000-1700 cm(-1) due to C=C, C=N, C-C and C-N, and very littl e peak at 2200 cm(-1) due to C=N in each film. Nanoindentation studies reve aled that the hardness of non-uniform multi-layer films of carbon and carbo n nitride was higher than that of uniform carbon nitride films. (C) 2000 El sevier Science B.V. All rights reserved.