First-principles calculations based on density-functional theory, ultra-sof
t pseudopotentials and plane-wave basis sets are used to investigate the en
ergetics, relaxed ionic positions and electronic structure of oxygen vacanc
ies on the SnO2(110) surface. We study three types of vacancy, obtained by
removing bridging, in-plane and sub-bridging oxygen atoms, and calculations
are made for a range of vacancy. concentrations, and for different geometr
ies at some concentrations, in order to probe interactions between the vaca
ncies. At low and intermediate concentrations, we find that the bridging va
cancy is most stable, in agreement with experiment. At high concentrations,
corresponding to a strongly reduced surface, the formation energies of bri
dging and in-plane vacancies are almost the same, so that both types should
occur in thermal equilibrium. In all situations examined, the relaxation o
f ions surrounding the vacancies is small - typically 0.1 Angstrom or less.
We present results showing how the electronic density of states in the gap
region is affected by the different kinds of defects, and we discuss the r
elation with measured ultraviolet photoelectron spectra. (C) 2000 Elsevier
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