CdS/opal photonic materials have been characterised by transmission electro
n microscopy. The photonic properties of opals formed by SiO2 nanospheres 3
80 nm in diameter, face-centred cubic ordered and with different CdS fillin
g factors were studied by means of specular reflectance or transmission spe
ctroscopy. It is shown that CdS semiconductor grows homogeneously in the op
al interstices, in a cubic phase, with 24 nm being the microcrystal particl
e size. We show here that chemical bath deposition (CBD) is a useful method
to fill the opal interstices, a crucial step for producing photonic band g
ap materials. (C) 2000 Acta Metallurgica Inc. Published by Elsevier Science
Ltd. All rights reserved.