MOCVD of high-k dielectrics, tantalum nitride and copper from directly injected liquid precursors

Thin films of tantalum oxide and tantalum nitride for microelectronics appl ications can be deposited by MOCVD using direct injection of same liquid pr ecursors of the type R-N = Ta(NEt2)(3). High-k mixed-metal oxides, such as Zr-Sn-Ti-O, metal doped TaOx and zirconium silicate, can also be deposited at relatively low temperatures from liquid mixtures as single-source precur sors without solvent, This solventless CVD system is considered a more cost effective and environmentally benign process than conventional liquid inje ction of metal-organic precursors dissolved In organic solvents, In additio n, recent advances in copper CVD precursors are reviewed. Copyright (C) 200 0 John Wiley & Sons, Ltd.