Y. Senzaki et al., MOCVD of high-k dielectrics, tantalum nitride and copper from directly injected liquid precursors, ADV MAT OPT, 10(3-5), 2000, pp. 93-103
Thin films of tantalum oxide and tantalum nitride for microelectronics appl
ications can be deposited by MOCVD using direct injection of same liquid pr
ecursors of the type R-N = Ta(NEt2)(3). High-k mixed-metal oxides, such as
Zr-Sn-Ti-O, metal doped TaOx and zirconium silicate, can also be deposited
at relatively low temperatures from liquid mixtures as single-source precur
sors without solvent, This solventless CVD system is considered a more cost
effective and environmentally benign process than conventional liquid inje
ction of metal-organic precursors dissolved In organic solvents, In additio
n, recent advances in copper CVD precursors are reviewed. Copyright (C) 200
0 John Wiley & Sons, Ltd.