Deposition of electroceramic thin films by MOCVD

MOCVD (metal-organic chemical vapor deposition) of new materials, such as p erovskite-type ceramic thin films, will be a major key technology in the fi eld of ULSI non-volatile and volatile memory applications. This article out lines the latest trends in the field of MOCVD equipment and process develop ment, in particular In the field of high k-dielectric and ferroelectrics, U sing liquid precursor delivery systems reproducible evaporation can be achi eved, Furthermore, perfect temperature control, as well as a precise gas an d vapor flow control through the gas inlet to the substrate, ensure high qu ality BST, PZT and SET thin films, bearing superior electrical and microstr uctural properties and near 100% step coverage at low process temperatures. Copyright (C) 2000 John Wiley & Sons, Ltd.