Metal-organic chemical vapour deposition of ferro-electric SrBi2Ta2O9 thinfilms

We report the application of the metal-organic chemical vapour deposition ( MOCVD) technique to the formation of ferro-electric SrBi2Ta2O9 (SBT), MOCVD is a desired technique for the application of high-density ferro-electric memory because it can produce high quality, conformal, very thin films, The re has been much progress in gas delivery methods and in precursors, which greatly affect controllability and reproducibility of the MOCVD process for fabricating ferro-electric thin films, With appropriate precursors and opt imized gas delivery conditions, MOCVD can produce high-performance ferroele ctric SET films. When forming SET thin films, precise control of compositio n is essential to acquire the electrical properties needed for ferro-electr ic memory applications, Copyright (C) 2000 John Wiley & Sons, Ltd.