High-power diode-end-pumped Nd : YVO4 laser: thermally induced fracture versus pump-wavelength sensitivity

Authors
Chen, YF Lan, YP Wang, SC
Citation
Yf. Chen et al., High-power diode-end-pumped Nd : YVO4 laser: thermally induced fracture versus pump-wavelength sensitivity, APP PHYS B, 71(6), 2000, pp. 827-830
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS B-LASERS AND OPTICS
ISSN journal
09462171 → ACNP
Volume
71
Issue
6
Year of publication
2000
Pages
827 - 830
Database
ISI
SICI code
0946-2171(200012)71:6<827:HDN:YL>2.0.ZU;2-F
Abstract
We report two kinds of compact and efficient diode-end-pumped TEM00 lasers with output power > 25 W at approximate to 50 W of incident pump power. One laser consists of a single 0.3 at. % Nd:YVO4 crystal in a V-type cavity, t he other laser includes two 0.5 at. % Nd:YVO4 crystals in a linear cavity. Experimental results show that lowering Nd3+ concentration can be beneficia l in extending the fracture-limited pump power but it also increases the se nsitivity of the pump wavelength due to the overlapping efficiency.