Deconvolution of the intrinsic spontaneous spectrum of vertical-cavity surface-emitting devices

A simple method for determining the intrinsic spontaneous spectrum of verti cal-cavity surface-emitting devices is presented. The procedure is based on angle-resolved measurements of the top-emission spectra and comparison wit h numerical simulations, which corresponds to a deconvolution. The use of t his technique is demonstrated on AlGaInP-based microcavity light-emitting d iodes designed for top emission at 650 nm. Measurement on reference light-e mitting diodes having the same active region confirmed the accuracy of this method which is nondestructive, easy to implement, and can be applied to v ertical-cavity surface-emitting lasers operating below threshold. (C) 2000 American Institute of Physics. [S0003-6951(00)02151-3].