Growth of stress-released GaAs on GaAs/Si structure by metalorganic chemical vapor deposition

Authors
Soga, T Jimbo, T Arokiaraj, J Umeno, M
Citation
T. Soga et al., Growth of stress-released GaAs on GaAs/Si structure by metalorganic chemical vapor deposition, APPL PHYS L, 77(24), 2000, pp. 3947-3949
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
24
Year of publication
2000
Pages
3947 - 3949
Database
ISI
SICI code
0003-6951(200012)77:24<3947:GOSGOG>2.0.ZU;2-K
Abstract
A stress-released GaAs layer was grown on GaAs bonded to Si substrate with the combination of epitaxial lift-off technique and regrowth by metalorgani c chemical vapor deposition. The GaAs thin film was bonded to Si substrate using SeS2 and another GaAs layer was regrown. The photoluminescence peak w avelength and the slope of the time resolved photoluminescence decay of GaA s/Si are almost the same as those of GaAs grown on GaAs substrate. (C) 2000 American Institute of Physics. [S0003-6951(00)01052-4].