Features of nanometer scale islands on CdSe/ZnSe surfaces

Citation
Bp. Zhang et al., Features of nanometer scale islands on CdSe/ZnSe surfaces, APPL PHYS L, 77(24), 2000, pp. 3950-3952
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
24
Year of publication
2000
Pages
3950 - 3952
Database
ISI
SICI code
0003-6951(200012)77:24<3950:FONSIO>2.0.ZU;2-D
Abstract
We examined the early-stage (within a few hours) properties in air of nanom eter scale islands formed on a CdSe/ZnSe surface. When a CdSe/ZnSe surface grown in vacuum was exposed to air, some islands were newly formed. The asp ect ratio of the island was found to increase first and then decrease. A de pletion zone was observed in the perimeter of the island which indicates th e intermixing of ZnSe into the island. Surface analyses using Auger electro n spectroscopy indicated that the island was composed mainly of oxides and the outer shell was Zn enriched and Cd depleted. This letter shows that sur face oxidation plays a key role in the formation of islands on CdSe/ZnSe su rfaces in atmosphere. (C) 2000 American Institute of Physics. [S0003-6951(0 0)04451-X].