On the analysis of hydrogen in as grown and ion implanted GaAs single crystals

Hydrogen detection and analysis was carried out on the undoped semi-insulat ing (S.I.) gallium arsenide (GaAs) single crystal using; conventional elast ic recoil detection analysis (ERDA) technique with high energy, heavy ion b eam. Presence of hydrogen (nearly 3 x 10(20) atoms/cc) has been observed on the as-grown samples and further high concentration of atomic hydrogen (to tal concentration of 7 x 10(20) atoms/cc) was found at the surface and was found to be decreasing with depth after 100 nm. Further the low energy hydr ogen and oxygen ions implanted separately in GaAs at room temperature were also analysed by ERDA technique. From the analysis, the projected range (Rp ) Of 100 keV hydrogen and oxygen ions in GaAs was determined to be 891 nm ( with DeltaR(p) equal to 320 nm), 170 nm (with DeltaR(p) equal to 120 nm) re spectively. The experimentally determined values of both R-p and DeltaR(p) are more as compared with the values obtained using the TRIM theoretical pr ogram. Low temperature (4K) photoluminescence (PL) measurements of un-impla nted and H+ implanted samples show the passivation of intrinsic deep level defect EL2 and shallow acceptor impurity carbon by the low energy implanted hydrogen ions. The low energy hydrogen implantation may be used as a metho d of hydrogenation for passivation.