STRUCTURAL AND MICROSTRUCTURAL CHARACTERIZATION OF GAN THIN-FILMS ANDGAN-BASED HETEROSTRUCTURES GROWN ON SAPPHIRE SUBSTRATES

Authors
RAZEGHI M KUNG P ZHANG X WALKER D SAXLER A LIM KY KIM KS
Citation
M. Razeghi et al., STRUCTURAL AND MICROSTRUCTURAL CHARACTERIZATION OF GAN THIN-FILMS ANDGAN-BASED HETEROSTRUCTURES GROWN ON SAPPHIRE SUBSTRATES, Journal of the Korean Physical Society, 30, 1997, pp. 1-6
Citations number
20
Categorie Soggetti
Physics
Journal title
Journal of the Korean Physical Society → ACNP
ISSN journal
03744884
Volume
30
Year of publication
1997
Supplement
S
Pages
1 - 6
Database
ISI
SICI code
0374-4884(1997)30:<1:SAMCOG>2.0.ZU;2-A
Abstract
The primary cause for x-ray rocking curve broadening in epitaxial GaN grown on basal plane sapphire is determined by studying the reciprocal space maps of both symmetric and asymmetric propagation of threding d islocations in GaN/AlGaN-based heterostructures is studied through cro ss sectional transmission electron microscopy. A density of screw and mixed dislocations less than 10(7) cm(-2) in these heterostructures is achieved.