STRUCTURAL-PROPERTIES OF INN GEN/AL2O3(0001) GROWTH BY MOLECULAR-BEAM-EPITAXY USING RF-PLASMA-SOURCE/

InN epitaxial layers were grown on Al2O3 (0001) substrate with GaN buf fer layers bg modified molecular beam epitaxy (MBE) using 13.5 MHz RF- radical nitrogen source. The reflection high-energy electron diffracti on (RHEED) patterns of the InN epitaxial layers were (2x2) spotty. In Xray diffraction (XRD) measurements, wurtzite (0002) InN peak at 2 the ta=31.3 degrees was observed. Surface morphology investigations were p erformed bg scanning electron microscopy (SEM), which showed smooth su rface morphology. In low-temperature (11 K) photoluminescence (PL) mea surement, nearest-band edge peak for InN lavers was noted at 2.1 eV.