EFFECTS OF DIELECTRIC FILMS ON ZN-DIFFUSION IN INP USING THIN-FILM DEPOSITION AND RAPID THERMAL ANNEALING

Effects of dielectric capping layer with different thickness on Zn dif fusion in InP using thermally evaporated Zn3P2 as a diffusion source w ere studied. Variation of Zn3P2 thickness deposited made negligible ef fect on Zn-diffusion. As the thickness of Si3N4 increased from 1000 An gstrom to 3000 PI, the diffusion coefficient decreased from 1x10(-9) c m(2)/sec to 2x10(-10) cm(2)/sec, whereas diffusion coefficient remaine d constant irrespective of the thickness of SiO2 encapsulant. Temperat ure dependence of diffusion coefficient showed that the activation ene rgy of diffusion coefficient is about 1.3 eV in the samples irrespecti ve of the type of dielectric encapsulants and their thickness.