The matching behavior of drain current I-D and small signal parameters tran
sconductance g(m) and differential output conductance g(DS) of MOSFETs is i
nvestigated under typical analog operating conditions. Whereas for the norm
alized standard deviations of I-D and g(m) the well known proportionality t
o (W x L-eff)(-1/2) is obtained, the normalized standard deviation of g(DS)
clearly deviates from this width and length dependence. For this parameter
, a proportionality to W-1/2 is found.