Electronic properties of partially crystalline SiOx suboxide films

Partially crystalline, silicon suboxide (SiOx, 0 < x < 2) insulating films with oxygen contents of 30 to 35 at.% have been grown on Si(100) substrates . The SiOx films form under conditions that cause the simultaneous kinetic processes of oxidation and etching of Si, which include an oxygen partial p ressure of similar to 10(-5) torr and a substrate temperature between 680 a nd 730 degreesC. Transmission electron microscopy images reveal that the Si Ox layer is not homogeneous, but rather is comprised of neighboring regions of order and disorder throughout the film. Temperature-dependent current-v oltage (I-V) measurements of a 30 at.% oxygen film indicate a zero-bias act ivation energy for current transport of 480 meV across the SiOx film.