Anomalous diffusion of boron in silicon driven under the N2O ambient

In this letter p(+)/n junctions formed by a solid source of a boron-doped l ayer under different ambient gases sill be demonstrated, In this study, it mas found that the obtained junction depth depends strongly on the ambient gas. Especially in the N2O ambient, the diffusion of boron is enormously en hanced, The resulting junction depth can be as high as eight times of those junctions formed in N-2. Such phenomenon is much more profound than the we ll-known oxidation-enhanced diffusion (OED) effect of O-2. We call this new effect as the nitri-oxidation-enhanced diffusion: (NOED) effect. As a cons equence, it is proposed that the NOED effect is instrumental for low-cost f abrication of well structures in the CMOS technology.