Citation
G. Kamoulakos et al., Impact of the S/D extension doping profile on the psi-cell concept, IEEE ELEC D, 21(12), 2000, pp. 596-597
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
07413106
→ ACNP
Volume
21
Issue
12
Year of publication
2000
Pages
596 - 597
Database
ISI
SICI code
0741-3106(200012)21:12<596:IOTSED>2.0.ZU;2-2
Abstract
The viability of the Psi -cell concept that has been proposed far CMOS embe
dded flash applications is examined as the CMOS dimensions shrink down. Mor
e specifically, we focus on the dependence of the memory operation on the d
oping profile underneath the spacer, We show that for optimum operation of
the Psi -cell concept below 0.18 mum CMOS technologies, the S/D extension i
mplantation process step Should be omitted.