Hot carrier reliability improvement by utilizing phosphorus transient enhanced diffusion for input/output devices of deep submicron CMOS technology

This letter presents a deep submicron CMOS process that takes advantage of phosphorus transient enhanced diffusion (TED) to improve the hot carrier re liability of 3.3 V input/output transistors, Arsenic/phosphorus LDI) nMOSFE Ts with and without TED are fabricated. The TED effects on a LDD junction p rofile, device substrate current and transconductance degradation are evalu ated, Substantial substrate current reduction and hot carrier lifetime impr ovement for the input/output devices are attained due to a more graded n(-) LDD doping profile by taking advantage of phosphorus TED.