A novel trench clustered insulated gate bipolar transistor (TCIGBT)

A new trench clustered insulated gate bipolar transistor (TCIGBT) is report ed, In this device, a multitude of UMOS cathode cells is enclosed within a common n-well and p-well, The TCIGBT provides a unique "self-clamping" feat ure to protect the trenches from high electric fields, The simulation resul ts based on 1.2 kV nonpunchthrough technology indicate an improvement of 25 %, in on state and 28% in the turn-off losses in comparison to the state-of -the-art trench IGBT. The saturation current levels of the TCIGBT, which ca n be designed independent of the forward drop, are also lower.