A 20-nm physical gate length NMOSFET featuring 1.2-nm gate oxide, shallow implanted source and drain and BF2 pockets (vol 21, pg 173, 2000)

Deleonibus, S Caillat, C Guegan, G Heitzmann, M Nier, ME Tedesco, SR Dal'zotto, B Martin, F Mur, P Papon, AM Lecarval, G Biswas, S

S. Deleonibus et al., A 20-nm physical gate length NMOSFET featuring 1.2-nm gate oxide, shallow implanted source and drain and BF2 pockets (vol 21, pg 173, 2000), IEEE ELEC D, 21(12), 2000, pp. 616-616

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Eletrical & Eletronics Engineeing

IEEE ELECTRON DEVICE LETTERS

07413106 → ACNP

21

12

2000

616 - 616

ISI

0741-3106(200012)21:12<616:A2PGLN>2.0.ZU;2-S