Transferred-substrate InP-based heterostructure barrier varactor diodes onquartz

InP-based heterostructure barrier varactor (HBV) devices employing air-brid ge technology have been fabricated on a quartz host substrate following a t ransfer-substrate technique. Electrical characterization demonstrates highl y symmetrical I(V) and C(V) characteristics due to the preservation of the high quality MBE epitaxial layers during the transfer process. Small signal RF measurements have been performed up to 110 GHz and display a marked red uction in the values of parasitic resistance and capacitance, thus confirmi ng the ability of the devices to operate in the upper-part of the mm spectr um.