Single transverse-mode filtering utilizing ion implantation: Application to 1.48-mu m unstable-cavity lasers

Citation
F. Gerard et al., Single transverse-mode filtering utilizing ion implantation: Application to 1.48-mu m unstable-cavity lasers, IEEE PHOTON, 12(11), 2000, pp. 1447-1449
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
ISSN journal
10411135 → ACNP
Volume
12
Issue
11
Year of publication
2000
Pages
1447 - 1449
Database
ISI
SICI code
1041-1135(200011)12:11<1447:STFUII>2.0.ZU;2-0
Abstract
We demonstrate the relevance of ion implantation of the multiple quantum-we ll active layer in unstable-cavity lasers as a means of efficiently filteri ng the parasitic higher order waves by introducing additional propagation l oss within the cavity, Several H+ implantation schemes are proposed and a c omparison is successfully made of experiment to a beam propagation method ( BPM) model on the basis of modal behavior. This work finally resulted in im proved single transverse-mode behavior of those lasers: more than 1.3 W CW of diffraction-limited power at 1.48 mum was then obtained utilizing a two- step implantation process.