A Y-fed directional coupler modulator with a highly linear transfer curve

We demonstrated a linearized Y-fed directional coupler modulator in Z-cut L iNbO3. The proof-of-concept device employed two electrode sections of oppos ite polarity whose lengths were chosen based on the results of our previous theoretical modeling. A highly linear modulation characteristic and improv ed tolerance to fabrication errors were achieved with a simple design, in e xcellent agreement with the theory. The linearity exceeded 90% over a wavel ength range of 45 nm, centered around 1530 nm, with a maximum linearity of 97% at 1510 nm and a maximum modulation depth of 98%, By comparison, the li nearity of conventional modulators is typically around 70%. Thus the device was proven to have a high linearity with a wide usable spectral range and relaxed fabrication tolerances.