DESIGN AND FABRICATION OF A NARROW STRIPE GAAS ALGAAS QUANTUM-WIRE LASER/

A high-performance narrow-stripe GaAs/AlGaAs quantum wire (QWR) laser with a p-n junction current-blocking layer has been designed, simulate d and fabricated. For the design's aspect, the thicknesses and the dop ing concentrations of p- and n-current-blocking layers, the conductive stripe width, the calculated light wavelength of both quantum well an d quantum wire, etc. were considered. In addition, to see the effect o f current-confinement into the QWR active region, the physical structu re of the QWR laser was modeled as a simple electrical circuit. Based on these simulated results, the QWR laser was fabricated using two-ste p MOCVD growth with a wet etching technique.