ION-REMOVED ELECTRON-CYCLOTRON-RESONANCE MOLECULAR-BEAM-EPITAXY GROWTH OF INGAN ON (0001)AL2O3

Authors
YU SJ CHO NI ASAHI H IWATA K KUROIWA R NOH JH ASAMI K GONDA S
Citation
Sj. Yu et al., ION-REMOVED ELECTRON-CYCLOTRON-RESONANCE MOLECULAR-BEAM-EPITAXY GROWTH OF INGAN ON (0001)AL2O3, Journal of the Korean Physical Society, 30, 1997, pp. 127-130
Citations number
11
Categorie Soggetti
Physics
Journal title
Journal of the Korean Physical Society → ACNP
ISSN journal
03744884
Volume
30
Year of publication
1997
Supplement
S
Pages
127 - 130
Database
ISI
SICI code
0374-4884(1997)30:<127:IEMG>2.0.ZU;2-I
Abstract
High quality InxGa((1-x))N layers (x=0.15) are grown at substrate temp erature range 610 similar to 680 degrees C by ion-removed ECR MBE. The sticking coefficient ratio of Indium and Gallium is investigated in t his temperatures range. PL (photoluminescence) spectra show strong ban d edge emission without deep level peak at room temperature. The band edge emission peak shifts to longer wavelength and brodens with increa sing indium mole fraction. The full width at half maximum is as narrow as 168 meV (room temperature) at x=0.15. Raman scattering spectra sug gest that the InGaN alloy shows one-mode behavior.