AlN thin films were prepared by RF sputtering method on the Si(100) an
d Si(lll) substrates at various parameters of the substrate temperatur
e, RF power, sputtering times and the N-2/Ar ratis and they were analy
zed by X-ray diffractometer, IR spectroscopy, Refractive index and Ext
inction coefficient analyzer. For the Si(100) substrate, the AlN thin
films of (101) orientation were obtained under the conditions of room
temperature and the nitrogen of 60 vol.%. For the Si(lll) substrate, t
he c-axis (001) AlN thin films were obtained under the nitrogen of 100
vol.% and the average value of the surface roughness of the film was
151 a. The crystallinity of the films, which were grown respectively u
nder the different conditions, were determined by the comparison of th
e band width of an E-1[TO:680 cm(-1)] phonon mode. The thicknesses of
AlN films were decreased dramatically in the region of the nitrogen of
40 similar to 60 vol.% due to the lower sputter yield of nitrogen.