PREPARATION OF UNIAXIALLY GROWN AIN THIN-FILMS BY RF-SPUTTERING

AlN thin films were prepared by RF sputtering method on the Si(100) an d Si(lll) substrates at various parameters of the substrate temperatur e, RF power, sputtering times and the N-2/Ar ratis and they were analy zed by X-ray diffractometer, IR spectroscopy, Refractive index and Ext inction coefficient analyzer. For the Si(100) substrate, the AlN thin films of (101) orientation were obtained under the conditions of room temperature and the nitrogen of 60 vol.%. For the Si(lll) substrate, t he c-axis (001) AlN thin films were obtained under the nitrogen of 100 vol.% and the average value of the surface roughness of the film was 151 a. The crystallinity of the films, which were grown respectively u nder the different conditions, were determined by the comparison of th e band width of an E-1[TO:680 cm(-1)] phonon mode. The thicknesses of AlN films were decreased dramatically in the region of the nitrogen of 40 similar to 60 vol.% due to the lower sputter yield of nitrogen.