RELIABILITY TEST AND FAILURE ANALYSIS OF 1.3-MU-M INGAASP INP UNCOOLED LASER-DIODES/

The purpose of this paper is to present reliability analysis of 1.3 pm InGaAsP/InP strain-compensated MQW-PBH uncooled laser diodes, and to demonstrate reliability projections and failure mechanisms by accelera ted aging tests for high speed optical communication systems. The expe rimental results show that the projected lifetime is about 8x10(5) hou rs at 40 degrees C where the activation energy is determined to be 0.9 13 eV. And the interface defectivity in the active layer is found to b e a main failure mode by the electroluminescence image test.