OPTICAL INVESTIGATION OF GAAS INGAP HETEROINTERFACES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY/

The characteristics of GaAs/InGaP heterostructures grown on exact (001 ), (Oaf) oriented 6 degrees off toward (111)A, and (112)B GaAs substra tes by metal-organic vapor phase epitaxy were investigated by photolum inescence. All samples studied exhibited anomalous optical behaviors, that is, strong luminescence peaks below the GaAs band edge. It is obs erved that when thin GaAsP layer is grown in-between the GaAs and InGa P, the GaAs band edge emission is recovered. From the results, we conc lude that the below GaAs band edge luminescence from the GaAs-on-InGaP interface is from the InGaAs formed at the interface by In carryover from InGaP to GaAs layer.