ION DOPING EFFECT IN LASER CRYSTALLIZED POLYCRYSTALLINE SILICON

Authors
KIM KH YOON SY KIM CO JANG J
Citation
Kh. Kim et al., ION DOPING EFFECT IN LASER CRYSTALLIZED POLYCRYSTALLINE SILICON, Journal of the Korean Physical Society, 30, 1997, pp. 231-235
Citations number
20
Categorie Soggetti
Physics
Journal title
Journal of the Korean Physical Society → ACNP
ISSN journal
03744884
Volume
30
Year of publication
1997
Supplement
S
Pages
231 - 235
Database
ISI
SICI code
0374-4884(1997)30:<231:IDEILC>2.0.ZU;2-5
Abstract
The annealing effect on the sheet resistance of ion-doped laser crysta llized poly-Si films has been studied. The role of hydrogen in the n-t ype poly-Si is related to defect passivation dominantly rather than do pant passivation. But the dopant neutralization by hydrogen is predomi nant in p-type poly-Si. On the other hand, the sheet resistance of the poly-Si decreases with increasing doping temperature due to less dama ge on the crystalline structure.