TEMPERATURE-DEPENDENT I-V CHARACTERISTICS OF PLASMA HYDROGENATED POLY-SI TFTS IN THE LOW-VOLTAGE REGION

This study presents an investigation of the current-voltage characteri stics of polycrystalline-silicon p-channel metal-oxide-semiconductor t hin film transistors (Poly-Si PMOS TFTs) for static random access memo ry (SRAM) loads in the low supply voltage region with various operatin g temperatures. The TFT has a bottom-gate lightly doped offset (LDO) s tructure and has been designed for 5 V operation. Currents are measure d at the low voltage and low temperature region. Using this result, th e current-voltage characteristic relations of the TFT are obtained as a function of temperature. We suggest that combination of low Ion at t he low voltage and low temperature region and the non-uniform characte ristics of the TFT can cause memory cell data instabilities such as st atic hold failures.