The growth of ZnS and Zn1-xMgxS alloys on GaAs and GaP substrates oriented
2 degrees off the (1 0 0) in the [1 1 0] direction, using metalorganic chem
ical vapor deposition, is reported. The photoluminescence of high-quality Z
nS samples is presented. Strain effects are considered to explain the valen
ce band splitting, and the energy shift between ZnS/GaAs and ZnS/GaP photol
uminescence spectra. For Zn1-xMgxS alloys, the composition as well as the o
ptical and structural properties are investigated as a function of the grow
th parameters. (C) 2000 Elsevier Science B.V. All rights reserved.