MOCVD growth and characterization of ZnS and Zn1-xMgxS alloys

Citation
V. Sallet et al., MOCVD growth and characterization of ZnS and Zn1-xMgxS alloys, J CRYST GR, 220(3), 2000, pp. 209-215
Citations number
20
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
220
Issue
3
Year of publication
2000
Pages
209 - 215
Database
ISI
SICI code
0022-0248(200012)220:3<209:MGACOZ>2.0.ZU;2-6
Abstract
The growth of ZnS and Zn1-xMgxS alloys on GaAs and GaP substrates oriented 2 degrees off the (1 0 0) in the [1 1 0] direction, using metalorganic chem ical vapor deposition, is reported. The photoluminescence of high-quality Z nS samples is presented. Strain effects are considered to explain the valen ce band splitting, and the energy shift between ZnS/GaAs and ZnS/GaP photol uminescence spectra. For Zn1-xMgxS alloys, the composition as well as the o ptical and structural properties are investigated as a function of the grow th parameters. (C) 2000 Elsevier Science B.V. All rights reserved.