Surface characterization of transparent conductive oxide Al-doped ZnO films

Authors
Chen, M Pei, ZL Sun, C Wen, LS Wang, X
Citation
M. Chen et al., Surface characterization of transparent conductive oxide Al-doped ZnO films, J CRYST GR, 220(3), 2000, pp. 254-262
Citations number
20
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
220
Issue
3
Year of publication
2000
Pages
254 - 262
Database
ISI
SICI code
0022-0248(200012)220:3<254:SCOTCO>2.0.ZU;2-J
Abstract
High preferred (002) orientation Al-doped ZnO (ZAO) films were prepared by DC magnetron reactive sputtering from a Zn target mixed with Al of 2.0wt%. The dependence of spatial distributions of resistivity on substrate tempera ture indicates that the spatial distribution of resistivity across substrat e placed parallel to the target was improved by increasing substrate temper ature. XPS analysis indicates Al-enrichment on the film surface. (C) 2000 E lsevier Science B.V. All rights reserved.