Real-time x-ray scattering study of growth behavior of sputter-deposited LaNiO3 thin films on Si substrates

Real-time x-ray reflectivity;Ind diffraction measurements under in situ spu ttering conditions were employed tc, study the growth behavior of LaNiO3 th in films on a Si substrate. Our results clearly show there is a transition layer of 60 Angstrom, which grew in the first 6 min of deposition. The in s itu x-ray-diffraction patterns indicated that this transition layer is amor phous. Subsequently, a polycrystalline overlayer grew as observed from the in situ x-ray reflectivity curves and diffraction patterns. Nucleation and growth took place on this transition layer with random orientation and then the polycrystalline columnar textures of (100) and (110) grew on the top o f this random orientation layer. By comparing the integrated intensities of two Bragg peaks in the plane normal of x-ray diffraction, it was found tha t a crossover of the growth orientation from the (110) to the (100) directi on occurred and the ability of (100) texturization enhanced with increasing film thickness beyond a certain critical value.