Bismuth titanium indium antimony oxide: A low-temperature-coefficient, high-K dielectric material

The 1 MHz dielectric properties for mixed-phase polycrystalline ceramics in the system Bi4Ti3O12-Bi(InxSb1-x)O-3 were reported. In the vicinity of amb ient temperature, the dielectric constants for the Sb and In end-members we re approximately 430 and 160, respectively, and the temperature coefficient s of dielectric constant (TCKs) were approximately -7600 and +430 ppm/deg. At an overall composition of Bi4Ti3O12:Bi(In0.37Sb0.63)O-3 a dielectric con stant of 144 and a low TCK were found. Powder x-ray diffraction and electro n microscopy analyses indicated that the optimal composition contained thre e major phases. Deviation of any of the elements from the above ratio leads to degradation of the properties.