Processing of epitaxial LiMn2O4 thin film on MgO(110) through metalorganicprecursor

Citation
Yh. Ikuhara et al., Processing of epitaxial LiMn2O4 thin film on MgO(110) through metalorganicprecursor, J MATER RES, 15(12), 2000, pp. 2750-2757
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS RESEARCH
ISSN journal
08842914 → ACNP
Volume
15
Issue
12
Year of publication
2000
Pages
2750 - 2757
Database
ISI
SICI code
0884-2914(200012)15:12<2750:POELTF>2.0.ZU;2-U
Abstract
Epitaxial LiMn2O4 Was successfully synthesized by coating a [Li-Mn-O] metal organic precursor solution onto MgO (110) substrates at temperatures as low as 350 degreesC, Cross-sectional transmission electron microscopy observat ion revealed that the orientation relationship between LiMn2O4 and MgO was (111)LiMn2O4//(111)(MgO), (110)LiMn2O4//(110)(MgO), and [112]LiM2O4//[112]( MgO) which resulted in the (111)LiMn2O4 planes growing perpendicular to the surface plane of MgO, The interface structure consisted of (111) layers of Mn atoms in the LiMn2O4 crystal aligned with the Mg atoms in the (111) pla nes of the MgO substrate when viewed along the [112] direction.