Structures and properties of (00l)-oriented Pb(Zr,Ti)O-3 films on LaNiO3/Si(001) substrates by pulsed laser deposition

In Pb(Zr0.4Ti0.6)O-3(PZT) (110-nm-thick) films grown on (00l)-oriented LaNi O3 (LNO) (50-nm-thick)/Si(001) films by pulsed laser deposition, the micros tructures and various structural properties of the PZT and the underlying L NO films were comparatively studied mainly using synchrotron x-ray scatteri ng experiments. Basically, the PZT films resembled the LNO films in microst ructure, crystal orientation, and mosaic distribution. The PZT films, howev er, showed an isotropic structural order (in- and out-of-plane coherence le ngths: 18 and 14 nm) in contrast to the anisotropic order of the LNO films (in- and out-of-plane coherence lengths: 5 and 30 nm). The PZT/LNO/Si syste ms displayed a good hysteresis characteristic (remanent polarization, 11.8 muC/cm(2); coercive field, 36.1 kV/cm). We confirmed that oriented PZT film s with reasonable ferroelectric properties can be successfully prepared on properly textured LNO films at a relatively low processing temperature.