Structural characterization of GaAs/thiol/electrolyte interface

Citation
A. Abdelghani et C. Jacquin, Structural characterization of GaAs/thiol/electrolyte interface, MATER LETT, 46(6), 2000, pp. 320-326
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS LETTERS
ISSN journal
0167577X → ACNP
Volume
46
Issue
6
Year of publication
2000
Pages
320 - 326
Database
ISI
SICI code
0167-577X(200012)46:6<320:SCOGI>2.0.ZU;2-A
Abstract
The present work is motivated by attempts in our laboratory to develop the physical basis for the design of biosensors (suited for aqueous medium) bas ed on biofunctional supported membranes. We studied the electrical properti es of n-doped gallium arsenide (GaAs) in contact with electrolyte and the h igh insulating properties of self-assembled monolayers (SAMs) of octadecane thiol (C18H37SH) by impedance spectroscopy and cyclic voltammetry. The aver age thickness of the thiol monolayer was measured by ellipsometry and confi rmed by impedance. The analysis of the impedance in terms of equivalent cir cuits of the GaAs/electrolyte and GaAs/insurator/electrolyte interface is d iscussed. This analysis allowed measurements of the defect area fraction of the thiol monolayer. (C) 2000 Elsevier Science B.V. All rights reserved.