The defect distribution and chemical etching of Langasite (La3Ga5SiO14) crystals grown by the Czochralski method

Authors
Jung, IH Shim, KB Auh, KH Fukuda, T
Citation
Ih. Jung et al., The defect distribution and chemical etching of Langasite (La3Ga5SiO14) crystals grown by the Czochralski method, MATER LETT, 46(6), 2000, pp. 354-357
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS LETTERS
ISSN journal
0167577X → ACNP
Volume
46
Issue
6
Year of publication
2000
Pages
354 - 357
Database
ISI
SICI code
0167-577X(200012)46:6<354:TDDACE>2.0.ZU;2-Z
Abstract
The defect distribution of grown Langasite crystals as different growth con ditions and selective chemical etching on La3Ga5SiO14 single crystals of va rious etchants were investigated. The applications of piezoelectric devices were shown to be necessary to ensure a high surface finish. Colloidal sili ca was found to produce the best polishing effect and H3PO4-based etchants were shown in distinct selective etching effect and HF-based etchants were shown in reduction of roughness. (C) 2000 Elsevier Science B.V. All rights reserved.