Orientation control of textured PZT thin films sputtered on silicon substrate with TiOx seeding

Authors
Bouregba, R Poullain, G Vilquin, B Murray, H
Citation
R. Bouregba et al., Orientation control of textured PZT thin films sputtered on silicon substrate with TiOx seeding, MATER RES B, 35(9), 2000, pp. 1381-1390
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS RESEARCH BULLETIN
ISSN journal
00255408 → ACNP
Volume
35
Issue
9
Year of publication
2000
Pages
1381 - 1390
Database
ISI
SICI code
0025-5408(20000701)35:9<1381:OCOTPT>2.0.ZU;2-8
Abstract
In situ deposition of Pb(Zr0.25Ti0.75)O-3 thin films by RF magnetron sputte ring has been performed at 500 degreesC on Pt/Ti/SiO2/Si substrates without any postannealing treatment. The growth of PZT is ensured, provided that a thin TiOx layer is sputtered prior to PZT. Moreover, we find that sputteri ng Ti in a 100% argon atmosphere leads to highly (100) oriented films, whil e adding oxygen during sputtering of Ti leads to purely (111) oriented film s. Electrical measurements performed on these films show remanent polarizat ion P-r, coercive field E-c, and dielectric constant consistent with their Zr/Ti ratio. (C) 2000 Elsevier Science Ltd. All rights reserved.