Using 12 MeV electron beams to develop silicon P+NN+ high frequency rectifying diodes

Twelve MeV electron beams were used to irradiate common P+NN+ diodes (1 A a nd 1 kV) in order to transfer them into high frequency rectifying ones. Som e interesting results have been obtained. It seems that this method is supe rior to the traditional gold-doping technique in controlling precisely the lives of the minority carriers. Compared with the later electron beam irrad iation made the reverse recovery time (t(rr)) and FWD-voltage (V-F) Of the diodes better consistent and repeatable. The high temperature performance w as also obviously improved. The qualified rate of diodes was enhanced by mo re than 30%. (C) 2000 Elsevier Science B.V. All rights reserved.