New insights into Si electrochemistry and pore growth by transient measurements and impedance spectroscopy

Citation
G. Hasse et al., New insights into Si electrochemistry and pore growth by transient measurements and impedance spectroscopy, PHYS ST S-A, 182(1), 2000, pp. 23-29
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
182
Issue
1
Year of publication
2000
Pages
23 - 29
Database
ISI
SICI code
0031-8965(200011)182:1<23:NIISEA>2.0.ZU;2-0
Abstract
Silicon electrochemistry has many applications, but still a number of unans wered questions. This paper reports on experimental results of current tran sient measurements and impedance spectroscopy along the I-U curve in the Si -HF system. The points of inflection of the I-U characteristics are found t o be interesting, signaling the onset of new mechanisms supporting or suppr essing current now which are mostly coupled to oxide formation and/or disso lution. The results are interpreted in terms of interactions of current hur sts in time and in space. Following this interpretation, in-situ monitoring of pore nucleation and growth with FFT impedance spectroscopy, allowed to identify several phases of macropore formation and optimal growth condition s. In-situ monitoring of macropore growth may therefore be used to control nucleation and growth of macropores.