Macropore formation on highly doped n-type silicon

Citation
M. Christophersen et al., Macropore formation on highly doped n-type silicon, PHYS ST S-A, 182(1), 2000, pp. 45-50
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
182
Issue
1
Year of publication
2000
Pages
45 - 50
Database
ISI
SICI code
0031-8965(200011)182:1<45:MFOHDN>2.0.ZU;2-S
Abstract
Using specially "designed" electrolytes, it is possible to obtain macropore s even in highly doped n-type silicon (0.020-0.060 Omega cm) without illumi nation. Based on predictions of the "current-burst-model" [phys, stat. sol. (a) 182, 63 (2000), this issue], HF-containing electrolytes were systemati cally modified with strongly oxidizing components and evaluated with respec t to their ability to produce macropores. Well developed macropores with de pths up to 10 mum and pore diameters between 200 nm and 2 mum could be obta ined in several cases. The macropore nucleation starts with a facetting of the surface on {111} planes.